Deep Reactive Ion Etching System

Deep Reactive Ion Etching System

  • Roshd Nano Fanavaran
  • Lithography and Engraving

    1. NanoScale Certification

    2. 2017/11/21
    3. 2020/11/21

    1. Certificate of Nanotechnology

    2. 2017/11/21
    3. 2020/11/21
Introduction Application Specification Advantage Of Using Nanotechnology Manual And Maintenance Safety And Package
The Deep Reactive Ion Etching system is used to etch silicon wafers and polysilicon using several reactive gases in a RF (radio frequency) induced plasma. The etching gas enters the reactive chamber and is ionized by the application of an electric field such as RF. Individual gas molecules are accelerated to the substrate surface. These charged particles remove the top layer of the material by the combined efforts of mechanical and chemical reactions. This process often has high selectivity to the etched material and etching can be controlled to be isotropic, anisotropic and vertical. 
The aspect ratio of structure can be as high as 50:1, while the dimensions can be as low as 100 nm. The DRIE process uses a mixture of three gases, H2, O2 and SF6 in a time multiplex technique with two successive steps: etching and passivation. The process is performing in room temperature. 
A DRIE system usually has three mass flow controllers (MFCs) to assure precise control of the process gases (Oxygen, Hydrogen and Sulfur Hexafluoride). The exhaust valve controller controls chamber pressure with the use of a mechanical pump. The system can support up to four-inch silicon wafers, however, samples with different sizes and shapes can be mounted.  

Some applications of this device are as follows:

  • Electronic and microelectromechanical systems (MEMS)
  • Used to excavate trenches for high-density capacitors for DRAM
Details of technical specifications are presented in the following Table.
 
Deep Reactive Ion Etching (DRIE) is a relatively new fabrication technology that has been widely used in MEMS and nanotechnology manufacturing. This technology enables very high aspect ratio etches to be performed into silicon substrates, one of which dimension can be as low as 100 nm.
  • Gas cylinders must be chained to a wall individually and being shielded from the sun's heat and radiation employed. 
  • Oxygen and Hydrogen are both highly flammable and explosive. 
  • Plasma is a source of UV radiation. Do not stare at plasma for long periods. 
  • In the event of an emergency, shut off the system power with the emergency power off button on the front of the system. If the machine malfunctions any time during the process, press the red emergency shut-down button.
  • All DRIE procedures must begin with an evacuation process. You cannot define any other process after Start before defining an evacuation process.
  • For more details on how to use the device, refer to the device catalog and user guide.
  • Before operating this tool, users must be trained and certified by the manufacturer.
  • Make sure that a substrate is loaded and chamber lid is closed before starting any processes.
  • Alarm buzz indicates the system has a condition that may not allow processing. The user should use caution until the cause of alarm is determined.
  • When the process is completed the user must shut down the system, turn off all gas cylinder and regulators.
  • The whole DRIE system is electrically grounded, although if you feel any static electrically shut down the system at once.
Opinion
Reply to Return
Security code